Atomic-Scale Characterization of N‑Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

Atomic-Scale Characterization of N‑Doped Si Nanocrystals Embedded in SiO2 by Atom Probe Tomography

Structural properties of undoped, As-doped, and P-doped silicon nanocrystals (Si-Ncs) embedded in a SiO2 matrix have been investigated using atom probe tomography. It turns out that both As and P atomic distributions have the same behavior in such system, withthe efficient incorporation of impuritie...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physical chemistry. C 2019-03, Vol.123 (12), p.7381-7389
Hauptverfasser: Demoulin, Rémi, Roussel, Manuel, Duguay, Sébastien, Muller, Dominique, Mathiot, Daniel, Pareige, Philippe, Talbot, Etienne
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Materials Science
Physics
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Structural properties of undoped, As-doped, and P-doped silicon nanocrystals (Si-Ncs) embedded in a SiO2 matrix have been investigated using atom probe tomography. It turns out that both As and P atomic distributions have the same behavior in such system, withthe efficient incorporation of impurities in the core of Si-Ncs even in the smallest ones (
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.8b08620