High robustness of epitaxial 4H-SiC graphene to oxidation processes

We present an experimental prove of high robustness of epitaxial 4H-SiC graphene to oxidation processes. During a post-fabrication cleaning procedure we noticed that epitaxial graphene is extremely stable to ozone treatment. We analyse graphene properties using both electron transport measurements and numerical calculations. We ascribe this effect to the substrate topography, which significantly affects the graphene stability under UV/ozone treatment.