A reconfigurable silicon-on-insulator diode with tunable electrostatic doping
P-N diodes can be emulated in ultrathin, fully depleted Silicon-On-Insulator films by appropriately biasing the front and back gates. Adjacent electron and hole populations form a virtual P-N junction. Systematic current-voltage I-V characteristics are presented revealing similarities and major diff...
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| Veröffentlicht in: | Journal of applied physics 2017-08, Vol.122 (8) |
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| container_title | Journal of applied physics |
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| creator | Cristoloveanu, Sorin Lee, Kyung Hwa Bawedin, Maryline |
| description | P-N diodes can be emulated in ultrathin, fully depleted Silicon-On-Insulator films by
appropriately biasing the front and back gates. Adjacent electron and hole populations
form a virtual P-N junction. Systematic current-voltage I-V characteristics are presented
revealing similarities and major differences with those of conventional P-N diodes with
ion-implanted doping. The lateral electric field from the anode combines with the
gate-induced vertical field and leads to unusual two-dimensional effects. A distinct merit
of the virtual diode is the possibility to adjust the concentrations of electrostatic
doping via the gates. The reverse current, forward current, and depletion
depth become gate-controlled. Our experiments show that by modifying the type, N or P, of
electrostatic doping, the virtual diode can be reconfigured in 8 other devices:
semi-virtual diodes, PIN diodes, tunneling field-effect transistors or band-modulation
FET. |
| doi_str_mv | 10.1063/1.4999314 |
| format | Article |
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appropriately biasing the front and back gates. Adjacent electron and hole populations
form a virtual P-N junction. Systematic current-voltage I-V characteristics are presented
revealing similarities and major differences with those of conventional P-N diodes with
ion-implanted doping. The lateral electric field from the anode combines with the
gate-induced vertical field and leads to unusual two-dimensional effects. A distinct merit
of the virtual diode is the possibility to adjust the concentrations of electrostatic
doping via the gates. The reverse current, forward current, and depletion
depth become gate-controlled. Our experiments show that by modifying the type, N or P, of
electrostatic doping, the virtual diode can be reconfigured in 8 other devices:
semi-virtual diodes, PIN diodes, tunneling field-effect transistors or band-modulation
FET.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4999314</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Anode effect ; Applied physics ; Current voltage characteristics ; Diodes ; Doping ; Engineering Sciences ; Field effect transistors ; Micro and nanotechnologies ; Microelectronics ; P-n junctions ; PIN diodes ; Semiconductor devices ; Silicon</subject><ispartof>Journal of applied physics, 2017-08, Vol.122 (8)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). Published by AIP Publishing.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-22b62c2d7e13a00f6872518ee1da59be6dc2d89b8c55c09f3d9d5f44d4a052523</citedby><cites>FETCH-LOGICAL-c361t-22b62c2d7e13a00f6872518ee1da59be6dc2d89b8c55c09f3d9d5f44d4a052523</cites><orcidid>0000-0003-4954-5688 ; 0000-0002-3576-5586</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.4999314$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,4498,27901,27902,76127</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02002478$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Cristoloveanu, Sorin</creatorcontrib><creatorcontrib>Lee, Kyung Hwa</creatorcontrib><creatorcontrib>Bawedin, Maryline</creatorcontrib><title>A reconfigurable silicon-on-insulator diode with tunable electrostatic doping</title><title>Journal of applied physics</title><description>P-N diodes can be emulated in ultrathin, fully depleted Silicon-On-Insulator films by
appropriately biasing the front and back gates. Adjacent electron and hole populations
form a virtual P-N junction. Systematic current-voltage I-V characteristics are presented
revealing similarities and major differences with those of conventional P-N diodes with
ion-implanted doping. The lateral electric field from the anode combines with the
gate-induced vertical field and leads to unusual two-dimensional effects. A distinct merit
of the virtual diode is the possibility to adjust the concentrations of electrostatic
doping via the gates. The reverse current, forward current, and depletion
depth become gate-controlled. Our experiments show that by modifying the type, N or P, of
electrostatic doping, the virtual diode can be reconfigured in 8 other devices:
semi-virtual diodes, PIN diodes, tunneling field-effect transistors or band-modulation
FET.</description><subject>Anode effect</subject><subject>Applied physics</subject><subject>Current voltage characteristics</subject><subject>Diodes</subject><subject>Doping</subject><subject>Engineering Sciences</subject><subject>Field effect transistors</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>P-n junctions</subject><subject>PIN diodes</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdkEFLAzEQhYMoWKsH_8GCJ4WtmWSzuzmWolaoeNFzyCbZNmXd1CRb8d-b2mLvwsDAzMebeQ-ha8ATwCW9h0nBOadQnKAR4JrnFWP4FI0wJpDXvOLn6CKENcYANeUj9DLNvFGub-1y8LLpTBZsZ9MgT2X7MHQyOp9p67TJvmxcZXHofznTGRW9C1FGqzLtNrZfXqKzVnbBXB36GL0_PrzN5vni9el5Nl3kipYQc0KakiiiKwNUYtyWdUUY1MaAlow3ptRpWfOmVowpzFuquWZtUehCYkYYoWN0u9ddyU5svP2Q_ls4acV8uhC7GSbJcFHVW0jszZ7dePc5mBDF2g2-T-8JAlBiVqTbR0WVLAVv2j9ZwGKXrABxSDaxd3s2KLtz7_r_wVvnj6DY6Jb-AICUhjg</recordid><startdate>20170828</startdate><enddate>20170828</enddate><creator>Cristoloveanu, Sorin</creator><creator>Lee, Kyung Hwa</creator><creator>Bawedin, Maryline</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-4954-5688</orcidid><orcidid>https://orcid.org/0000-0002-3576-5586</orcidid></search><sort><creationdate>20170828</creationdate><title>A reconfigurable silicon-on-insulator diode with tunable electrostatic doping</title><author>Cristoloveanu, Sorin ; Lee, Kyung Hwa ; Bawedin, Maryline</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-22b62c2d7e13a00f6872518ee1da59be6dc2d89b8c55c09f3d9d5f44d4a052523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Anode effect</topic><topic>Applied physics</topic><topic>Current voltage characteristics</topic><topic>Diodes</topic><topic>Doping</topic><topic>Engineering Sciences</topic><topic>Field effect transistors</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>P-n junctions</topic><topic>PIN diodes</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cristoloveanu, Sorin</creatorcontrib><creatorcontrib>Lee, Kyung Hwa</creatorcontrib><creatorcontrib>Bawedin, Maryline</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cristoloveanu, Sorin</au><au>Lee, Kyung Hwa</au><au>Bawedin, Maryline</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A reconfigurable silicon-on-insulator diode with tunable electrostatic doping</atitle><jtitle>Journal of applied physics</jtitle><date>2017-08-28</date><risdate>2017</risdate><volume>122</volume><issue>8</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>P-N diodes can be emulated in ultrathin, fully depleted Silicon-On-Insulator films by
appropriately biasing the front and back gates. Adjacent electron and hole populations
form a virtual P-N junction. Systematic current-voltage I-V characteristics are presented
revealing similarities and major differences with those of conventional P-N diodes with
ion-implanted doping. The lateral electric field from the anode combines with the
gate-induced vertical field and leads to unusual two-dimensional effects. A distinct merit
of the virtual diode is the possibility to adjust the concentrations of electrostatic
doping via the gates. The reverse current, forward current, and depletion
depth become gate-controlled. Our experiments show that by modifying the type, N or P, of
electrostatic doping, the virtual diode can be reconfigured in 8 other devices:
semi-virtual diodes, PIN diodes, tunneling field-effect transistors or band-modulation
FET.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4999314</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0003-4954-5688</orcidid><orcidid>https://orcid.org/0000-0002-3576-5586</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2017-08, Vol.122 (8) |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_02002478v1 |
| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Anode effect Applied physics Current voltage characteristics Diodes Doping Engineering Sciences Field effect transistors Micro and nanotechnologies Microelectronics P-n junctions PIN diodes Semiconductor devices Silicon |
| title | A reconfigurable silicon-on-insulator diode with tunable electrostatic doping |
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