Experimental and theoretical investigation of carrier confinement in InAs quantum dashes grown on InP(001)

Carrier confinement in InAs quantum dashes (QDas) grown on InP(001) is investigated both experimentally and theoretically. The aim of these studies is to reconstruct the electronic structure of the QDas. QDas with low size dispersion are achieved by improving growth conditions. Optical transitions between ground and excited states are studied by continuous-wave-photoluminescence and photoluminescence-excitation experiments at low temperature. We also report on infrared spectroscopy of conduction-band intersubband transitions. A simplified theoretical model is developed, yielding results consistent with the experimental data. Combining experimental and theoretical results, we propose an interpretation of the optical transitions occurring in these QDas, and we give a first theoretical absorption spectrum of these structures.