Thermal conductivity of partially amorphous porous silicon by photoacoustic technique

In this paper, thermal transport properties study of partially amorphous porous silicon obtained by irradiation with swift (110MeV) uranium ions is reported. A photoacoustic technique allows thermal conductivity evaluation of the samples with enhanced amorphous fraction (>80%). In particular, 3-fold thermal conductivity decrease is shown to be achieved for the completely amorphous porous silicon layers in comparison with as-prepared non-irradiated porous samples. [Display omitted] •Thermal conductivity of partial amorphous PS was studied.•Photoacoustic, Raman and scanning thermal microscopy techniques were applied for this purpose.•The advantages of photoacoustic techniques for study highly porous and amorphous silicon were shown.•Decrease of thermal conductivity of fully amorphized PS more than 3 times in comparison with initial samples was shown.