Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect

In this work, electrical properties of lateral n-channel MOSFETs implanted with differentnitrogen doses in the channel region were measured by Hall-effect technique at 300K. A mobility improvement with increasing nitrogen implantation doses is observed. Interface trap density (Dit) was determined fr...

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Veröffentlicht in:Materials science forum 2014-10, Vol.806, p.127-132
Hauptverfasser: Mortet, Vincent, Uhnevionak, Viktoryia, Burenkov, Alexander, Strenger, Chrisitan, Bedel-Pereira, Eléna, Ortiz, Guillermo, Bauer, Anton J., Pichler, Peter, Cristiano, Fuccio
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Sprache:eng
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Zusammenfassung:In this work, electrical properties of lateral n-channel MOSFETs implanted with differentnitrogen doses in the channel region were measured by Hall-effect technique at 300K. A mobility improvement with increasing nitrogen implantation doses is observed. Interface trap density (Dit) was determined from the experimentally measured Hall carrier density. Our results show a high Dit near and within the conduction band that does not change significantly when the nitrogen implantation dose is increased, despite observed mobility improvement.
ISSN:0255-5476
1662-9752
1662-9752
1662-9760
DOI:10.4028/www.scientific.net/MSF.806.127