Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy
We correlate the structural properties of aluminium‐based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05Ga0.95N0.005As0.995 alloys. Both parameters increase with the annealing temperatu...
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| Veröffentlicht in: | Physica Status Solidi. B: Basic Solid State Physics 2016-05, Vol.253 (5), p.918-922 |
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| container_title | Physica Status Solidi. B: Basic Solid State Physics |
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| creator | Kolhatkar, Gitanjali Boucherif, Abderraouf Ataellah Bioud, Youcef Fafard, Simon Ruediger, Andreas Aimez, Vincent Arès, Richard |
| description | We correlate the structural properties of aluminium‐based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05Ga0.95N0.005As0.995 alloys. Both parameters increase with the annealing temperature due to the disappearance of N–C and N–H–VGa complexes. After annealing, a mobility of 60 cm2 V−1s−1 for a hole concentration of 1 × 1019 cm−3 are measured, which is similar to the values reported on GaAs with the same carrier concentration. |
| doi_str_mv | 10.1002/pssb.201552617 |
| format | Article |
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The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05Ga0.95N0.005As0.995 alloys. Both parameters increase with the annealing temperature due to the disappearance of N–C and N–H–VGa complexes. After annealing, a mobility of 60 cm2 V−1s−1 for a hole concentration of 1 × 1019 cm−3 are measured, which is similar to the values reported on GaAs with the same carrier concentration.</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201552617</identifier><language>eng</language><publisher>Blackwell Publishing Ltd</publisher><subject>AlGaNAs alloys ; Alloys ; Annealing ; Carrier density ; chemical beam epitaxy ; Correlation ; defects ; dilute nitrides ; Electrical properties ; Engineering Sciences ; Gallium arsenide ; mobility ; Molecular beam epitaxy ; Solid state physics</subject><ispartof>Physica Status Solidi. 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After annealing, a mobility of 60 cm2 V−1s−1 for a hole concentration of 1 × 1019 cm−3 are measured, which is similar to the values reported on GaAs with the same carrier concentration.</description><subject>AlGaNAs alloys</subject><subject>Alloys</subject><subject>Annealing</subject><subject>Carrier density</subject><subject>chemical beam epitaxy</subject><subject>Correlation</subject><subject>defects</subject><subject>dilute nitrides</subject><subject>Electrical properties</subject><subject>Engineering Sciences</subject><subject>Gallium arsenide</subject><subject>mobility</subject><subject>Molecular beam epitaxy</subject><subject>Solid state physics</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhi0EEuVjZfYIQ4ovruNmLBW0QFU-CmK0HPdCA24T7JSSf09CUMXGdLrT87zSvYScAOsCY-F54X3SDRkIEUYgd0gHRAgBjwXskg7jkgUQy3CfHHj_xhiTwKFDni8tmtJlRluqV3PqS7c25drVa-HyAl2Zoad5Sgd2pKcDT7W1eeXpq8s3K5pU1Cxw-WMnqJcUi6zUX9UR2Uu19Xj8Ow_J89Xl03AcTO5G18PBJDA9wWSQyCjhLMEIYM7RgIigJ5HPI857RqRhLJGFPZBxYtBo4CyVkESx7PdTbbQI-SE5a3MX2qrCZUvtKpXrTI0HE9XcGMTQB8E-oWZPW7b-62ONvlTLzBu0Vq8wX3tVc1GDx7xGuy1qXO69w3SbDUw1Xauma7XtuhbiVthkFqt_aHU_m138dYPWzXyJX1tXu3cVSS6FepmOVF8-itvpzZN64N8DDZGV</recordid><startdate>201605</startdate><enddate>201605</enddate><creator>Kolhatkar, Gitanjali</creator><creator>Boucherif, Abderraouf</creator><creator>Ataellah Bioud, Youcef</creator><creator>Fafard, Simon</creator><creator>Ruediger, Andreas</creator><creator>Aimez, Vincent</creator><creator>Arès, Richard</creator><general>Blackwell Publishing Ltd</general><general>Wiley</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-1594-3242</orcidid><orcidid>https://orcid.org/0000-0003-0815-5288</orcidid></search><sort><creationdate>201605</creationdate><title>Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy</title><author>Kolhatkar, Gitanjali ; Boucherif, Abderraouf ; Ataellah Bioud, Youcef ; Fafard, Simon ; Ruediger, Andreas ; Aimez, Vincent ; Arès, Richard</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4507-b76b30be611d3ec156147e3d6334c5f297e024179bceca130f71b69788faca523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>AlGaNAs alloys</topic><topic>Alloys</topic><topic>Annealing</topic><topic>Carrier density</topic><topic>chemical beam epitaxy</topic><topic>Correlation</topic><topic>defects</topic><topic>dilute nitrides</topic><topic>Electrical properties</topic><topic>Engineering Sciences</topic><topic>Gallium arsenide</topic><topic>mobility</topic><topic>Molecular beam epitaxy</topic><topic>Solid state physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kolhatkar, Gitanjali</creatorcontrib><creatorcontrib>Boucherif, Abderraouf</creatorcontrib><creatorcontrib>Ataellah Bioud, Youcef</creatorcontrib><creatorcontrib>Fafard, Simon</creatorcontrib><creatorcontrib>Ruediger, Andreas</creatorcontrib><creatorcontrib>Aimez, Vincent</creatorcontrib><creatorcontrib>Arès, Richard</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Physica Status Solidi. 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| identifier | ISSN: 0370-1972 |
| ispartof | Physica Status Solidi. B: Basic Solid State Physics, 2016-05, Vol.253 (5), p.918-922 |
| issn | 0370-1972 1521-3951 |
| language | eng |
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| source | Wiley Journals |
| subjects | AlGaNAs alloys Alloys Annealing Carrier density chemical beam epitaxy Correlation defects dilute nitrides Electrical properties Engineering Sciences Gallium arsenide mobility Molecular beam epitaxy Solid state physics |
| title | Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy |
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