Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy

We correlate the structural properties of aluminium‐based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05Ga0.95N0.005As0.995 alloys. Both parameters increase with the annealing temperatu...

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Veröffentlicht in:Physica Status Solidi. B: Basic Solid State Physics 2016-05, Vol.253 (5), p.918-922
Hauptverfasser: Kolhatkar, Gitanjali, Boucherif, Abderraouf, Ataellah Bioud, Youcef, Fafard, Simon, Ruediger, Andreas, Aimez, Vincent, Arès, Richard
Format: Artikel
Sprache:eng
Schlagworte:
AlGaNAs alloys
Alloys
Annealing
Carrier density
chemical beam epitaxy
Correlation
defects
dilute nitrides
Electrical properties
Engineering Sciences
Gallium arsenide
mobility
Molecular beam epitaxy
Solid state physics
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Zusammenfassung:We correlate the structural properties of aluminium‐based dilute nitrides to their electrical properties. The effect of annealing on the carrier density and the mobility is measured on chemical beam epitaxy grown Al0.05Ga0.95N0.005As0.995 alloys. Both parameters increase with the annealing temperature due to the disappearance of N–C and N–H–VGa complexes. After annealing, a mobility of 60 cm2 V−1s−1 for a hole concentration of 1 × 1019 cm−3 are measured, which is similar to the values reported on GaAs with the same carrier concentration.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201552617