CMOS buried quad p-n junction photodetector for multi-wavelength analysis

This paper presents a buried quad p-n junction (BQJ) photodetector fabricated with a HV (high-voltage) CMOS process. Multiple buried junction photodetectors are wavelength-sensitive devices developed for spectral analysis applications where a compact integrated solution is preferred over systems inv...

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Veröffentlicht in:	Optics express 2012-01, Vol.20 (3), p.2053-2061
Hauptverfasser:	Richard, Charles, Courcier, Thierry, Pittet, Patrick, Martel, Stéphane, Ouellet, Luc, Lu, Guo-Neng, Aimez, Vincent, Charette, Paul G
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences Equipment Design Equipment Failure Analysis Miniaturization Photometry - instrumentation Semiconductors
Online-Zugang:	Volltext
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