CMOS buried quad p-n junction photodetector for multi-wavelength analysis

This paper presents a buried quad p-n junction (BQJ) photodetector fabricated with a HV (high-voltage) CMOS process. Multiple buried junction photodetectors are wavelength-sensitive devices developed for spectral analysis applications where a compact integrated solution is preferred over systems inv...

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Veröffentlicht in:Optics express 2012-01, Vol.20 (3), p.2053-2061
Hauptverfasser: Richard, Charles, Courcier, Thierry, Pittet, Patrick, Martel, Stéphane, Ouellet, Luc, Lu, Guo-Neng, Aimez, Vincent, Charette, Paul G
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Sprache:eng
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Zusammenfassung:This paper presents a buried quad p-n junction (BQJ) photodetector fabricated with a HV (high-voltage) CMOS process. Multiple buried junction photodetectors are wavelength-sensitive devices developed for spectral analysis applications where a compact integrated solution is preferred over systems involving bulk optics or a spectrometer due to physical size limitations. The BQJ device presented here is designed for chip-based biochemical analyses using simultaneous fluorescence labeling of multiple analytes such as with advanced labs-on-chip or miniaturized photonics-based biosensors. Modeling and experimental measurements of the spectral response of the device are presented. A matrix-based method for estimating individual spectral components in a compound spectrum is described. The device and analysis method are validated via a test setup using individually modulated LEDs to simulate light from 4-component fluorescence emission.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.20.002053