High throughput sub-10 nm metallic particles organization on templates made by block copolymer self-assembly and nanoimprint

The combination of block copolymer (BCP) and nanoimprint lithography (NIL) presents a novel and cost-effective approach to achieve sub-50 nm patterning resolution. Through this study, the authors demonstrate the placement of a few Au nanoparticles per hole using capillary force assembly (CFA). Polystyrene block poly(dimethylsiloxane) (PS-b-PDMS) with spherical morphology is used as etching mask, which is then transferred into Si by a plasma etching. Si posts with ~35 nm of diameter, ~55 nm of height and ~51 nm of periodicity are obtained. Si templates are then used as a NIL master mould to pattern a thermoplastic resist. An ultra-high resolution hole-array is created on a polymethyl-methacrylate (PMMA) substrate, where 10-nm Au nanoparticles are placed in each hole. The BCP-NIL method, presented here, is highly promising for the current semiconductor industry to build devices in the fields of opto-electronics, chemical sensors and energy conversion and storage.