Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO 2 Thin Films for MIM Capacitors

Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO 2 Thin Films for MIM Capacitors

In this letter, the dielectric properties of rutile TiO2 thin films are studied for metal-insulator-metal capacitor applications. The dielectric constant, the ac conductivity, and the loss tangent are measured in a wide band frequency range, from 1 Hz to 2 GHz. The effect of aluminum doping, as well...

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Veröffentlicht in:IEEE electron device letters 2017-03, Vol.38 (3), p.375-378
Hauptverfasser: Chaker, Ahmad, Bermond, Cedric, Artillan, Philippe, Gonon, Patrice, Vallee, Christophe, Bsiesy, Ahmad
Format: Artikel
Sprache:eng
Schlagworte:
Physics
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Zusammenfassung:In this letter, the dielectric properties of rutile TiO2 thin films are studied for metal-insulator-metal capacitor applications. The dielectric constant, the ac conductivity, and the loss tangent are measured in a wide band frequency range, from 1 Hz to 2 GHz. The effect of aluminum doping, as well as the influence of film thickness, on the dielectric properties is presented.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2654513