Morphological and structural evolutions of diluted Ge1−xMnx epitaxial films

Morphological and structural evolutions of diluted Ge1−xMnx epitaxial films

We investigate the structural and morphological evolutions of Ge1−xMnx films, grown by molecular beam epitaxy on Ge(100), as a function of Mn nominal concentration (x). We show that in our experimental growth conditions (growth temperature TG∼160°C), Mn atoms incorporated in the matrix increases wit...

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Veröffentlicht in:Applied physics letters 2007-10, Vol.91 (14), p.141920-141920--3
Hauptverfasser: Ayoub, J.-P., Favre, L., Berbezier, I., Ronda, A., Morresi, L., Pinto, N.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Physics
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Zusammenfassung:We investigate the structural and morphological evolutions of Ge1−xMnx films, grown by molecular beam epitaxy on Ge(100), as a function of Mn nominal concentration (x). We show that in our experimental growth conditions (growth temperature TG∼160°C), Mn atoms incorporated in the matrix increases with x up to a concentration m∼0.03. Magnetic properties of the samples are mainly related to Ge3Mn5 cluster phase, while transport properties are connected to Ge:Mn matrix.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2794723