Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator

Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator

The impact of the bias condition during irradiation on the total-dose response of a bipolar voltage comparator is investigated. Experimental results obtained with input pins biased asymmetrically during irradiation exhibit completely different total-dose response compared to irradiation with all pin...

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Veröffentlicht in:IEEE transactions on nuclear science 2006-12, Vol.53 (6), p.3232-3236
Hauptverfasser: Bernard, M. F., Dusseau, L., Boch, J., Vaille, J.-R., Saigne, F., Schrimpf, R.D., Lorfevre, E., David, J. P.
Format: Artikel
Sprache:eng
Schlagworte:
Analog circuits
Analog integrated circuits
Asymmetry
Bias
Bipolar analog circuits
Bipolar transistors
Circuit analysis
circuitry
Circuits
Comparators
Degradation
Electric potential
Electronics
Engineering Sciences
Gain
integrated circuits (ICs)
Ionizing radiation
Irradiation
linear voltage comparator
Manufacturing
Mirrors
Pins
total dose
Voltage
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Zusammenfassung:The impact of the bias condition during irradiation on the total-dose response of a bipolar voltage comparator is investigated. Experimental results obtained with input pins biased asymmetrically during irradiation exhibit completely different total-dose response compared to irradiation with all pins grounded. Circuit analysis shows that asymmetrical biasing of the input stage creates a mismatch of the gain degradation in the transistors constituting the differential pair
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2006.885002