Temperature effect on an N-channel commercial VDMOSFET transistor

High temperature effect on MOSFET devices was evaluated by exposing the silicon devices to a temperature value above the normal operating range in order to study the device behavior under extreme conditions. Measurements show an increasing in the saturation drain‐source current and the reverse drain...

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Veröffentlicht in:	Physica status solidi. C 2011-03, Vol.8 (3), p.875-878
Hauptverfasser:	Abboud, Nadine, Salame, Chafic, Cuminal, Yvan, Foucaran, Alain, Hoffmann, Alain
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Electric potential electrical characterization Electronics Engineering Sciences high temperature MOSFET MOSFETs Reproduction Semiconductor devices Silicon devices Solid state physics Switching Temperature effects Threshold voltage Transistors Voltage
Online-Zugang:	Volltext
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