Temperature effect on an N-channel commercial VDMOSFET transistor

High temperature effect on MOSFET devices was evaluated by exposing the silicon devices to a temperature value above the normal operating range in order to study the device behavior under extreme conditions. Measurements show an increasing in the saturation drain‐source current and the reverse drain‐source current with temperature while the transistor threshold voltage and the diffusion voltage of the integrated pn junction were decreased. The carrier's mobility shows an increasing with temperature while the drain‐source on‐resistance was decreased. Switching times are also investigated as function of temperature and important variations are obtained on the device turn‐on and turn‐off times. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)