Hetero-epitaxy of ZnSiAs2/GaAs grown by atmospheric pressure MOVPE
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| Veröffentlicht in: | Journal of crystal growth 1991-01, Vol.107 (1-4), p.410-415 |
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| container_end_page | 415 |
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| container_issue | 1-4 |
| container_start_page | 410 |
| container_title | Journal of crystal growth |
| container_volume | 107 |
| creator | Achargui, N. Benachenhou, A. Foucaran, A. Bougnot, G. Coulon, P. Laurenti, J.P. Camassel, J. |
| description | |
| doi_str_mv | 10.1016/0022-0248(91)90495-Q |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 1991-01, Vol.107 (1-4), p.410-415 |
| issn | 0022-0248 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_01787502v1 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Electronics Engineering Sciences |
| title | Hetero-epitaxy of ZnSiAs2/GaAs grown by atmospheric pressure MOVPE |
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