Electrical parameters of Schottky contacts in CaCu3Ti4O12 thin film capacitors

CaCu 3 T i4 O 12 (CCTO) thin films were grown by pulsed laser deposition on Pt and La 0.9 Sr 1.1 NiO 4 (LSNO) bottom electrodes. The electrical characteristics of the CCTO/Pt and CCTO/LSNO Schottky junctions have been analyzed by impedance spectroscopy, capacitance–voltage (C–V) and current–voltage (I–V) measurements as a function of frequency (40 Hz–1 MHz) and temperature (300–475 K). Similar results were obtained for the two Schottky diodes. The conduction mechanism through the Schottky junctions was described using a thermionic emission model and the electrical parameters were determined. The strong deviation from the ideal I–V characteristics and the increase in capacitance at low frequency for −0.5 V bias are in agreement with the presence of traps near the interfaces. Results point toward the important effect of defects generated at the interface by deposition of CCTO.