Surface Cleaning and Passivation Using (NH 4 ) 2 S Treatment for Cu(In,Ga)Se 2 Solar Cells: A Safe Alternative to KCN

With the aim of developing a safe alternative to the KCN etchant for the removal of Cu x Se secondary phases at the surface of Cu(In,Ga)Se 2 (CIGSe) absorber, a method based on ammonium sulfide (AS) chemical treatment is proposed. Although lower etching rates are observed compared with the KCN reference solution, the AS solution is found to selectively etch Cu x Se phases. In addition, it allows modifying the surface chemical state of the CIGSe absorber by incorporation of sulfur. As a consequence, the minority carrier lifetime located close to the surface of the absorber is found to be improved. Furthermore, it is demonstrated that optimizing the AS treatment time induces a remarkable enhancement in the electrical performances of the CIGSe‐based solar cells.