Functionalized Cluster-Assembled Magnetic Nanostructures for Applications to high Integration-Density Devices

This paper presents recent results on the preparation and characterization of original magnetic nanostructures from nanoclusters preformed in the gas phase. Magnetic binary‐clusters (i.e. Co‐Sm, Co‐Pt, Co‐Ag) with rather well controlled sizes, structures and compositions, are prepared in the gas pha...

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Veröffentlicht in:Advanced engineering materials 2005-06, Vol.7 (6), p.475-485
Hauptverfasser: Perez, A., Dupuis, V., Tuaillon-Combes, J., Bardotti, L., Prevel, B., Bernstein, E., Mélinon, P., Favre, L., Hannour, A., Jamet, M.
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Sprache:eng
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Zusammenfassung:This paper presents recent results on the preparation and characterization of original magnetic nanostructures from nanoclusters preformed in the gas phase. Magnetic binary‐clusters (i.e. Co‐Sm, Co‐Pt, Co‐Ag) with rather well controlled sizes, structures and compositions, are prepared in the gas phase using a combined laser vaporization‐rare gas condensation source and subsequently deposited at low energy (LECBD : Low Energy Cluster Beam Deposition) on various functionalized substrates to grow cluster‐assembled magnetic nanostructures exhibiting specific magnetic properties. Especially a high magnetic anisotropy and consequently a high magnetic blocking temperature compatible with future applications to high density memory devices and spin electronics are expected. In this context of applications, 2D‐organized arrays of functionalized binary‐cluster assembled dots are prepared by LECBD on FIB‐functionalized substrates (FIB: Focussed Ion Beam) with the ultimate objective to reach areal densities in the range of the Tbits/in2. This paper presents recent results on the preparation and characterization of original magnetic nanostructures from nanoclusters preformed in the gas phase using the Low Energy Cluster Beam Deposition Method (LECBD). Cluster‐assembled nanostructures exhibiting high magnetic anisotropy compatible with future applications to high density memory devices and spin electronics are synthesized and organized on functionalized substrates with the ultimate objective to reach areal densities in the range of the Tbits/in2.
ISSN:1438-1656
1527-2648
DOI:10.1002/adem.200400220