SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices

The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature,...

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Veröffentlicht in:	Materials science forum 2014-02, Vol.778-780, p.1122-1125
Hauptverfasser:	Thierry-Jebali, Nicolas, Calvez, Cyril, Tournier, Dominique, Chailloux, Thibaut, Planson, Dominique
Format:	Artikel
Sprache:	eng
Schlagworte:	Cryogenic temperature Cryogenics Devices Electric power generation Electronics Engineering Sciences Materials science MOSFETs Silicon carbide
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The aim of this study consists in comparing the effects of temperature on various SiC power devices. Electrical characteristics have been measured for temperatures from 100K to 525K. All devices are suitable for high temperature. However, SiC MOSFETs are not a good choice for cryogenic temperature, while SiC BJTs are less affected by temperature than other components, especially for cryogenic temperature.
ISSN:	0255-5476 1662-9752 1662-9752 1662-9760
DOI:	10.4028/www.scientific.net/MSF.778-780.1122