p-Doped SiC Growth on Diamond Substrate by VLS Transport
This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-S...
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| Veröffentlicht in: | Materials science forum 2013-01, Vol.740-742, p.331-334 |
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| creator | Carole, Davy Planson, Dominique Cauwet, François Ferro, Gabriel Vo-Ha, Arthur Tournier, Dominique Soulière, Véronique Brylinski, Christian Lazar, Mihai |
| description | This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-SiC was obtained during the growth. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al-Si and diamond via a dissolution/precipitation process. This explains the random nucleation and the polycrystalline growth. Despite this, preliminary electrical measurements show encouraging results. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.740-742.331 |
| format | Article |
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Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-SiC was obtained during the growth. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al-Si and diamond via a dissolution/precipitation process. This explains the random nucleation and the polycrystalline growth. 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Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-SiC was obtained during the growth. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al-Si and diamond via a dissolution/precipitation process. This explains the random nucleation and the polycrystalline growth. 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| subjects | Aluminum Diamonds Electronics Engineering Sciences Liquids Nucleation Precipitation Propane Silicon carbide Transport |
| title | p-Doped SiC Growth on Diamond Substrate by VLS Transport |
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