p-Doped SiC Growth on Diamond Substrate by VLS Transport

This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-S...

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Veröffentlicht in:Materials science forum 2013-01, Vol.740-742, p.331-334
Hauptverfasser: Vo-Ha, Arthur, Tournier, Dominique, Lazar, Mihai, Soulière, Véronique, Carole, Davy, Ferro, Gabriel, Brylinski, Christian, Cauwet, François, Planson, Dominique
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Sprache:eng
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Zusammenfassung:This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-SiC was obtained during the growth. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al-Si and diamond via a dissolution/precipitation process. This explains the random nucleation and the polycrystalline growth. Despite this, preliminary electrical measurements show encouraging results.
ISSN:0255-5476
1662-9752
1662-9752
1662-9760
DOI:10.4028/www.scientific.net/MSF.740-742.331