p-Doped SiC Growth on Diamond Substrate by VLS Transport
This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-S...
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Veröffentlicht in: | Materials science forum 2013-01, Vol.740-742, p.331-334 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This work deals with the study of the Selective Epitaxial Growth (SEG) of SiC using the Vapour-Liquid-Solid (VLS) transport on diamond (100) substrate with Al-Si as the liquid phase fed by propane. Morphology, structure and doping type of the SiC deposit were determined. Polycrystalline p-doped 3C-SiC was obtained during the growth. Study of the initial step of growth showed that SiC nucleation occurs without any propane addition but just through the interaction of liquid Al-Si and diamond via a dissolution/precipitation process. This explains the random nucleation and the polycrystalline growth. Despite this, preliminary electrical measurements show encouraging results. |
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ISSN: | 0255-5476 1662-9752 1662-9752 1662-9760 |
DOI: | 10.4028/www.scientific.net/MSF.740-742.331 |