Comparison of SiC Thyristors with Differently Etched JTEs

This paper presents results attained with SiC GTO thyristors terminated by a single step and a graded etched JTE. The comparison of both types of devices reveals no significant difference in the on-state and switching characteristics but a higher blocking capability of some thyristors with the latte...

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Veröffentlicht in:	Materials science forum 2012-05, Vol.717-720, p.1167-1170
Hauptverfasser:	Scharnholz, Sigo, De Doncker, Rik W., Pâques, Gontran, Dheilly, Nicolas, Planson, Dominique
Format:	Artikel
Sprache:	eng
Schlagworte:	Electronics Engineering Sciences
Online-Zugang:	Volltext
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