Optical investigation of InAs quantum dashes grown on InP(001) vicinal substrate

•We give an original results about the optical properties of InAs/InP(001) quantum dashes used in optoelectronic devices.•The optoelectronic properties of InAs/InP(001) QDas are investigated with photoluminescence spectroscopy.•The lateral coupling behavior observed for the nominal sample is completely eliminated in the case of the vicinal sample.•The vicinal sample has an excellent thermal stability and a broad emission range.•The optical properties of the vicinal sample give the opportunity to use it in solar cells and in infrared photodetectors. We investigate with photoluminescence (PL) measurements the optoelectronic properties of self-organized InAs quantum dots (QDs) grown on nominal InP(001) substrate. InAs/InP(001) QDs are grown by Molecular Beam Epitaxy (MBE) method with optimized conditions in Stranski-Krastanov regime. A lateral coupling behavior was shown by photoluminescence spectroscopy. This phenomena is considered as a degradation source of the optoelectronic properties of InAs/InP(001) QDs used in lasers applications. In order to overcome this disadvantage behavior, we have studied the optical properties of InAs quantum islands (QIs) grown on vicinal InP(001) with 2° off miscut angle toward the [110] direction. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum nanostructures have quantum dashes (QDas) form elongated in [1–10] direction. From excitation density PL measurements, we have evidenced that the different observed PL peaks are attributed to the emission of InAs QDas of different size. The lateral coupling behavior is completely eliminated in the case of this sample. The temperature-dependent PL measurements show a good thermal stability and an emission wavelength at room temperature around 1.55μm of the vicinal sample. All these properties prove that this sample possess favorable characteristics for microlasers based devices functioning at room temperature and for optical telecommunication with long range weapon. The broad emission range observed at 300K of the vicinal sample gives the possibility to use it as an active zone in solar cells and in infrared photodectectors of high optical gain and excellent sensitivity on a wide energy range.