Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2
Detailed analysis of Raman spectra recorded from (100)-oriented GaAs layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca,Sr)F2 gives evidence of internal misorientation effects (twins). This analysis accounts for the various phenomena (doping, disorder, electron-phonon coupli...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 1986-08, Vol.60 (3), p.1025-1031 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1031 |
|---|---|
| container_issue | 3 |
| container_start_page | 1025 |
| container_title | Journal of applied physics |
| container_volume | 60 |
| creator | LANDA, G CARLES, R RENUCCI, J. B FONTAINE, C BEDEL, E MUNOZ-YAGUE, A |
| description | Detailed analysis of Raman spectra recorded from (100)-oriented GaAs layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca,Sr)F2 gives evidence of internal misorientation effects (twins). This analysis accounts for the various phenomena (doping, disorder, electron-phonon coupling) likely to modify the scattering efficiency. Calculations are performed in order to obtain quantitative evaluations of the misoriented volume amount. |
| doi_str_mv | 10.1063/1.337392 |
| format | Article |
| fullrecord | <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_01481852v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_01481852v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c354t-762496f7bf006fcee82854b08783355570443876bbad964bf0ca17e4d55887803</originalsourceid><addsrcrecordid>eNo90E1LAzEQBuAgCtYq-BNy8NCC2042ySbrrRTbCgXBj4uXZTbN2sg2W5L1o_56t1QKAwMzz8zhJeSawYhBxsdsxLnieXpCegx0nigp4ZT0AFKW6Fzl5-Qixg8AxjTPe-TtCTfoqVljQNPa4H6xdY2nTUXbb-e98-_Uebq23a6xW9fij8OaRrtxpvGrT9M2gda4syHe0TlO4ngwxdvnMJyll-Sswjraq__eJ6-z-5fpIlk-zh-mk2ViuBRtorJU5Fmlygogq4y1OtVSlKCV5lxKqUAIrlVWlrjKM9Exg0xZsZJSdwZ4nwwPf9dYF9vgNhh2RYOuWEyWxX4GTGimZfrFOjs4WBOaGIOtjgcMin1-BSsO-XX05kC3GA3WVUBvXDx6nYLoiv8B2vNs4g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2</title><source>AIP Digital Archive</source><creator>LANDA, G ; CARLES, R ; RENUCCI, J. B ; FONTAINE, C ; BEDEL, E ; MUNOZ-YAGUE, A</creator><creatorcontrib>LANDA, G ; CARLES, R ; RENUCCI, J. B ; FONTAINE, C ; BEDEL, E ; MUNOZ-YAGUE, A</creatorcontrib><description>Detailed analysis of Raman spectra recorded from (100)-oriented GaAs layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca,Sr)F2 gives evidence of internal misorientation effects (twins). This analysis accounts for the various phenomena (doping, disorder, electron-phonon coupling) likely to modify the scattering efficiency. Calculations are performed in order to obtain quantitative evaluations of the misoriented volume amount.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.337392</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed Matter ; Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of applied physics, 1986-08, Vol.60 (3), p.1025-1031</ispartof><rights>1987 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-762496f7bf006fcee82854b08783355570443876bbad964bf0ca17e4d55887803</citedby><cites>FETCH-LOGICAL-c354t-762496f7bf006fcee82854b08783355570443876bbad964bf0ca17e4d55887803</cites><orcidid>0000-0001-6639-4530 ; 0000-0003-3362-5851</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8204204$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-01481852$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>LANDA, G</creatorcontrib><creatorcontrib>CARLES, R</creatorcontrib><creatorcontrib>RENUCCI, J. B</creatorcontrib><creatorcontrib>FONTAINE, C</creatorcontrib><creatorcontrib>BEDEL, E</creatorcontrib><creatorcontrib>MUNOZ-YAGUE, A</creatorcontrib><title>Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2</title><title>Journal of applied physics</title><description>Detailed analysis of Raman spectra recorded from (100)-oriented GaAs layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca,Sr)F2 gives evidence of internal misorientation effects (twins). This analysis accounts for the various phenomena (doping, disorder, electron-phonon coupling) likely to modify the scattering efficiency. Calculations are performed in order to obtain quantitative evaluations of the misoriented volume amount.</description><subject>Condensed Matter</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNo90E1LAzEQBuAgCtYq-BNy8NCC2042ySbrrRTbCgXBj4uXZTbN2sg2W5L1o_56t1QKAwMzz8zhJeSawYhBxsdsxLnieXpCegx0nigp4ZT0AFKW6Fzl5-Qixg8AxjTPe-TtCTfoqVljQNPa4H6xdY2nTUXbb-e98-_Uebq23a6xW9fij8OaRrtxpvGrT9M2gda4syHe0TlO4ngwxdvnMJyll-Sswjraq__eJ6-z-5fpIlk-zh-mk2ViuBRtorJU5Fmlygogq4y1OtVSlKCV5lxKqUAIrlVWlrjKM9Exg0xZsZJSdwZ4nwwPf9dYF9vgNhh2RYOuWEyWxX4GTGimZfrFOjs4WBOaGIOtjgcMin1-BSsO-XX05kC3GA3WVUBvXDx6nYLoiv8B2vNs4g</recordid><startdate>19860801</startdate><enddate>19860801</enddate><creator>LANDA, G</creator><creator>CARLES, R</creator><creator>RENUCCI, J. B</creator><creator>FONTAINE, C</creator><creator>BEDEL, E</creator><creator>MUNOZ-YAGUE, A</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-6639-4530</orcidid><orcidid>https://orcid.org/0000-0003-3362-5851</orcidid></search><sort><creationdate>19860801</creationdate><title>Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2</title><author>LANDA, G ; CARLES, R ; RENUCCI, J. B ; FONTAINE, C ; BEDEL, E ; MUNOZ-YAGUE, A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-762496f7bf006fcee82854b08783355570443876bbad964bf0ca17e4d55887803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>Condensed Matter</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LANDA, G</creatorcontrib><creatorcontrib>CARLES, R</creatorcontrib><creatorcontrib>RENUCCI, J. B</creatorcontrib><creatorcontrib>FONTAINE, C</creatorcontrib><creatorcontrib>BEDEL, E</creatorcontrib><creatorcontrib>MUNOZ-YAGUE, A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LANDA, G</au><au>CARLES, R</au><au>RENUCCI, J. B</au><au>FONTAINE, C</au><au>BEDEL, E</au><au>MUNOZ-YAGUE, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2</atitle><jtitle>Journal of applied physics</jtitle><date>1986-08-01</date><risdate>1986</risdate><volume>60</volume><issue>3</issue><spage>1025</spage><epage>1031</epage><pages>1025-1031</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Detailed analysis of Raman spectra recorded from (100)-oriented GaAs layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca,Sr)F2 gives evidence of internal misorientation effects (twins). This analysis accounts for the various phenomena (doping, disorder, electron-phonon coupling) likely to modify the scattering efficiency. Calculations are performed in order to obtain quantitative evaluations of the misoriented volume amount.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.337392</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-6639-4530</orcidid><orcidid>https://orcid.org/0000-0003-3362-5851</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1986-08, Vol.60 (3), p.1025-1031 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_01481852v1 |
| source | AIP Digital Archive |
| subjects | Condensed Matter Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2 |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T09%3A35%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Raman%20characterization%20of%20twinning%20in%20heteroepitaxial%20semiconductor%20layers:%20GaAs/(Ca,Sr)F2&rft.jtitle=Journal%20of%20applied%20physics&rft.au=LANDA,%20G&rft.date=1986-08-01&rft.volume=60&rft.issue=3&rft.spage=1025&rft.epage=1031&rft.pages=1025-1031&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.337392&rft_dat=%3Chal_cross%3Eoai_HAL_hal_01481852v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |