Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca,Sr)F2

Detailed analysis of Raman spectra recorded from (100)-oriented GaAs layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca,Sr)F2 gives evidence of internal misorientation effects (twins). This analysis accounts for the various phenomena (doping, disorder, electron-phonon coupli...

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Veröffentlicht in:	Journal of applied physics 1986-08, Vol.60 (3), p.1025-1031
Hauptverfasser:	LANDA, G, CARLES, R, RENUCCI, J. B, FONTAINE, C, BEDEL, E, MUNOZ-YAGUE, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Detailed analysis of Raman spectra recorded from (100)-oriented GaAs layers grown by molecular-beam epitaxy on the lattice-matched insulator (Ca,Sr)F2 gives evidence of internal misorientation effects (twins). This analysis accounts for the various phenomena (doping, disorder, electron-phonon coupling) likely to modify the scattering efficiency. Calculations are performed in order to obtain quantitative evaluations of the misoriented volume amount.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.337392