Characterization of implantation and annealing of Zn-implanted InP by Raman spectrometry

First- and second-order Raman scattering by Zn-implanted InP is investigated in order to determine critical fluences needed for a complete disturbance of the lattice and recovery temperature during thermal annealing. Disorder-activated first-order acoustical scattering and second-order optical scatt...

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Veröffentlicht in:	Journal of applied physics 1986-09, Vol.60 (6), p.1980-1984
Hauptverfasser:	BEDEL, E, LANDA, G, CARLES, R, RENUCCI, J. B, ROQUAIS, J. M, FAVENNEC, P. N
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography
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Beschreibung
Zusammenfassung:	First- and second-order Raman scattering by Zn-implanted InP is investigated in order to determine critical fluences needed for a complete disturbance of the lattice and recovery temperature during thermal annealing. Disorder-activated first-order acoustical scattering and second-order optical scattering are shown to be highly sensitive probes.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.337199