Current Switching Coupled to Molecular Spin-States in Large-Area Junctions

Current Switching Coupled to Molecular Spin-States in Large-Area Junctions

The fabrication of large‐area vertical junctions with a molecular spin‐crossover complex displaying concerted changes of spin degrees of freedom and charge‐transport properties is reported. Fabricated devices allow spin‐state switching in the spin‐crossover layer to be triggered and probed by optica...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-09, Vol.28 (34), p.7508-7514
Hauptverfasser: Lefter, Constantin, Rat, Sylvain, Costa, José Sánchez, Manrique-Juárez, María D., Quintero, Carlos M., Salmon, Lionel, Séguy, Isabelle, Leichle, Thierry, Nicu, Liviu, Demont, Philippe, Rotaru, Aurelian, Molnár, Gábor, Bousseksou, Azzedine
Format: Artikel
Sprache:eng
Schlagworte:
charge injection
Degrees of freedom
Devices
Electrical junctions
Electrical resistance
Electronics
Engineering Sciences
hopping conduction
Mathematical analysis
spin crossover
Switching
tunneling current
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Zusammenfassung:The fabrication of large‐area vertical junctions with a molecular spin‐crossover complex displaying concerted changes of spin degrees of freedom and charge‐transport properties is reported. Fabricated devices allow spin‐state switching in the spin‐crossover layer to be triggered and probed by optical means, while detecting associated changes in electrical resistance in the junctions.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201601420