Surface Control of Doping in Self-Doped Nanocrystals

Self-doped nanocrystals raise great interest for infrared (IR) optoelectronics because their optical properties span from near to far IR. However, their integration for photodetection requires a fine understanding of the origin of their doping and also a way to control the magnitude of the doping. I...

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Veröffentlicht in:ACS applied materials & interfaces 2016-10, Vol.8 (40), p.27122-27128
Hauptverfasser: Robin, Adrien, Livache, Clément, Ithurria, Sandrine, Lacaze, Emmanuelle, Dubertret, Benoit, Lhuillier, Emmanuel
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Sprache:eng
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Zusammenfassung:Self-doped nanocrystals raise great interest for infrared (IR) optoelectronics because their optical properties span from near to far IR. However, their integration for photodetection requires a fine understanding of the origin of their doping and also a way to control the magnitude of the doping. In this paper, we demonstrate that a fine control of the doping level between 0.1 and 2 electrons per dot is obtained through ligand exchange. The latter affects not only the interparticle coupling but also their optical properties because of the band-shift resulting from the presence of surface dipoles. We demonstrate that self-doping is a bulk process and that surface dipoles can control its magnitude. We additionally propose a model to quantify the dipole involved with each ligand. We eventually use the ligand design rule previously evidenced to build a near-infrared photodetector on a soft and transparent substrate. The latter significantly improves the performance compared to previously reported colloidal quantum dot-based photodetectors on plastic substrates operated in the telecom wavelength range.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.6b09530