Influence of annealing on the structural and magnetic properties of epitaxial Zn1-xMnxO films grown by MOCVD on sapphire

Thermal annealing of MOCVD grown Zn1–xMnxO layers between 300 °C and 1000 °C in an oxygen atmosphere modifies both their latttice parameters and their magnetic properties. Combined X‐ray diffraction and EPR studies indicate a redistribution of intrinsic defects but persistent antiferromagnetic phase...

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Veröffentlicht in:Physica status solidi. C 2006-03, Vol.3 (4), p.1001-1004
Hauptverfasser: Chikoidze, E., von Bardeleben, H. J., Dumont, Y., Jomard, F., Gorochov, O.
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Sprache:eng
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Zusammenfassung:Thermal annealing of MOCVD grown Zn1–xMnxO layers between 300 °C and 1000 °C in an oxygen atmosphere modifies both their latttice parameters and their magnetic properties. Combined X‐ray diffraction and EPR studies indicate a redistribution of intrinsic defects but persistent antiferromagnetic phase in the annealed films. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1634
1610-1642
DOI:10.1002/pssc.200564651