Key issues for accurate simulation of a-Si:H / c-Si heterojunction solar cells

Accurate simulation of a-Si:H / c-Si heterojunction (HET) solar cells is mandatory for acquiring a deeper understanding of device physics, better knowledge of material properties, and thus improving solar cells efficiency towards the 26% theoretical limit. The purpose of this paper is to provide rel...

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Veröffentlicht in:Energy procedia 2011, Vol.8, p.174-179
Hauptverfasser: Coignus, J., Baudrit, M., Singer, J., Lachaume, R., Muñoz, D., Thony, P.
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Sprache:eng
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Zusammenfassung:Accurate simulation of a-Si:H / c-Si heterojunction (HET) solar cells is mandatory for acquiring a deeper understanding of device physics, better knowledge of material properties, and thus improving solar cells efficiency towards the 26% theoretical limit. The purpose of this paper is to provide relevant guidelines and to highlight key issues for accurate and physicallybased HET solar cells simulation. The need for a 2D simulation approach is demonstrated, together with an accurate description of the device optical performance. For the first time, a unified set of models and material parameters is proposed for reproducing experimental IV characteristics under illumination and obscurity conditions, considering state-of-the-art material parameters and localized defects. Finally, the key role of solar cell simulation is demonstrated for further device optimization.
ISSN:1876-6102
1876-6102
DOI:10.1016/j.egypro.2011.06.120