Optical properties of InGaAs films embedded in plasma etched InP wells

The optical properties of InGaAs films grown in plasma etched InP wells by molecular beam epitaxy have been investigated and compared to the properties of similar films grown on nonpatterned InP substrates. The excitonic features of the photoluminescence spectra were maintained for the selectively g...

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Veröffentlicht in:	Applied physics letters 1992-08, Vol.61 (7), p.798-800
Hauptverfasser:	GEORGAKILAS, A, CHRISTOU, A, LEFEBVRE, P, ALLEGRE, J, ZEKENTES, K, HALKIAS, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Engineering Sciences Exact sciences and technology Materials Science Micro and nanotechnologies Microelectronics Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Optics Photonic Physics
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Zusammenfassung:	The optical properties of InGaAs films grown in plasma etched InP wells by molecular beam epitaxy have been investigated and compared to the properties of similar films grown on nonpatterned InP substrates. The excitonic features of the photoluminescence spectra were maintained for the selectively grown well films.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.107805