CO2 laser-induced precipitation of CdSxSe1−x nanoparticles in a borosilicate glass: A new approach for the localized growth of quantum dots

Local growth of CdSxSe1−x nanoparticles in a dense glass under continuous-wave CW CO2 infrared laser irradiation. [Display omitted] •A new approach for the localized growth of quantum dots is proposed.•The continuous-wave CO2 laser-induced heat acts as a thermal addition.•The composition of the CdSx...

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Veröffentlicht in:Optical materials 2015-04, Vol.42, p.331-334
Hauptverfasser: Kinowski, Christophe, Robbe-Cristini, Odile, Bernard, Rémy, El Hamzaoui, Hicham, Boussekey, Luc, Bouazaoui, Mohamed, Capoen, Bruno
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Sprache:eng
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Zusammenfassung:Local growth of CdSxSe1−x nanoparticles in a dense glass under continuous-wave CW CO2 infrared laser irradiation. [Display omitted] •A new approach for the localized growth of quantum dots is proposed.•The continuous-wave CO2 laser-induced heat acts as a thermal addition.•The composition of the CdSxSe1−x NCs remains constant across the irradiated area.•The particle size increases from the border to the center of the irradiated zone. A novel method allowing the local growth of semiconductor nanoparticles in dense silicate glasses is presented. In this method combining a continuous middle-infrared laser irradiation and a heat-treatment in open air, a transparent melt-quenched borosilicate glass containing CdSxSe1−x nanocrystals was annealed at a temperature below the softening point. Simultaneously, a continuous infrared laser irradiation at 10.6μm was applied, acting as a thermal addition. Resonant Raman, photoluminescence and absorption spectra reveal the local growth of CdSxSe1−x nanoparticles, with a homogeneous composition and average particle radii ranging from 1.9 to 5.5nm. These results demonstrate the feasibility of coupling a laser irradiation with an appropriate heat-treatment in order to achieve the spatial organization of nanostructures in vitreous materials.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2015.01.023