Low frequency noise characterization in n-channel FinFETs

► The carrier number fluctuations dominate the 1/f noise (80–300K). ► The extracted oxide trap density certifies the quality of the gate oxide interface. ► Temperature analysis of the Lorentzian noise allowed to identify traps in the Si film. ► Correlation between these observed traps and some technological steps was made. In this paper, the low frequency noise was studied from 100K up to room temperature in n-channel triple-gate FinFET transistors fabricated on silicon on insulator (SOI) substrates. It was found that the noise spectra contain 1/f and Lorentzian components, which can be analyzed using the standpoint of the number fluctuation by generation–recombination of carriers due to traps that can be located either at the gate oxide/Si film interface or in the silicon depletion film. The variations of the low frequency noise versus temperature allow to evaluate the quality of the gate oxide interface, to identify traps in the silicon film and to make a correlation between the observed traps and some technological steps. Moreover, some additional process steps used to boost the device performances seem to increase the trap densities in the film with no significant impact at the gate oxide/Si film interface.