DC and low frequency noise performances of SOI p-FinFETs at very low temperature

•The benefit of the use of strain engineering techniques is kept at 10K operation.•The carrier number fluctuations dominate the 1/fγ noise in weak inversion. The γ parameter variation with the temperature (independent from strain and gate length) shows that the spatial distribution of traps in the o...

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Veröffentlicht in:	Solid-state electronics 2013-12, Vol.90, p.160-165
Hauptverfasser:	Achour, H., Talmat, R., Cretu, B., Routoure, J.-M., Benfdila, A., Carin, R., Collaert, N., Simoen, E., Mercha, A., Claey, C.
Format:	Artikel
Sprache:	eng
Schlagworte:	1/fγ noise Applied sciences Channels DC performance Electronics Engineering Sciences Exact sciences and technology Low frequency noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SOI FinFET Transistors Very low temperature
Online-Zugang:	Volltext
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