Effects of 1064 nm laser on MOS capacitor
► We would like to predict complex circuit’s behavior under photoelectric stimulation. ► For that, it is mandatory to understand first the behavior of elementary devices. ► That is why we analyze effects induced by static laser stimulation on MOS capacitors. ► Traps are induced in different part of...
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| Veröffentlicht in: | Microelectronics and reliability 2012-09, Vol.52 (9-10), p.1816-1821 |
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| container_end_page | 1821 |
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| container_issue | 9-10 |
| container_start_page | 1816 |
| container_title | Microelectronics and reliability |
| container_volume | 52 |
| creator | Llido, R. Masson, P. Regnier, A. Goubier, V. Haller, G. Pouget, V. Lewis, D. |
| description | ► We would like to predict complex circuit’s behavior under photoelectric stimulation. ► For that, it is mandatory to understand first the behavior of elementary devices. ► That is why we analyze effects induced by static laser stimulation on MOS capacitors. ► Traps are induced in different part of the band gap depending on the substrate type. ► It is also shown that electric stress increases the density of such interface traps.
This study is driven by the need to improve failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus, it is mandatory to understand the behavior of elementary devices under laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses effects induced by static photoelectric laser stimulation (1064nm) on a 90nm technology metal–oxide–semiconductor (MOS) capacitor. On n-MOS capacitor the laser induces interface traps in the low part of the silicon band-gap, contrary to p-MOS capacitor where it is in the upper half part of the gap. It is also shown that electric stress increases the density of such interface traps. |
| doi_str_mv | 10.1016/j.microrel.2012.06.123 |
| format | Article |
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This study is driven by the need to improve failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus, it is mandatory to understand the behavior of elementary devices under laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses effects induced by static photoelectric laser stimulation (1064nm) on a 90nm technology metal–oxide–semiconductor (MOS) capacitor. On n-MOS capacitor the laser induces interface traps in the low part of the silicon band-gap, contrary to p-MOS capacitor where it is in the upper half part of the gap. It is also shown that electric stress increases the density of such interface traps.</description><identifier>ISSN: 0026-2714</identifier><identifier>EISSN: 1872-941X</identifier><identifier>DOI: 10.1016/j.microrel.2012.06.123</identifier><identifier>CODEN: MCRLAS</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Applied sciences ; Design. Technologies. Operation analysis. Testing ; Dielectric, amorphous and glass solid devices ; Electronics ; Engineering Sciences ; Exact sciences and technology ; Integrated circuits ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Testing, measurement, noise and reliability</subject><ispartof>Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1816-1821</ispartof><rights>2012 Elsevier Ltd</rights><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c376t-480035338571cb390bca83b6efbd98df72b1bd7bd624679459303c6d63dbe0733</citedby><cites>FETCH-LOGICAL-c376t-480035338571cb390bca83b6efbd98df72b1bd7bd624679459303c6d63dbe0733</cites><orcidid>0000-0001-6126-6708</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0026271412003204$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,309,310,314,776,780,785,786,881,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26548199$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-00988338$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Llido, R.</creatorcontrib><creatorcontrib>Masson, P.</creatorcontrib><creatorcontrib>Regnier, A.</creatorcontrib><creatorcontrib>Goubier, V.</creatorcontrib><creatorcontrib>Haller, G.</creatorcontrib><creatorcontrib>Pouget, V.</creatorcontrib><creatorcontrib>Lewis, D.</creatorcontrib><title>Effects of 1064 nm laser on MOS capacitor</title><title>Microelectronics and reliability</title><description>► We would like to predict complex circuit’s behavior under photoelectric stimulation. ► For that, it is mandatory to understand first the behavior of elementary devices. ► That is why we analyze effects induced by static laser stimulation on MOS capacitors. ► Traps are induced in different part of the band gap depending on the substrate type. ► It is also shown that electric stress increases the density of such interface traps.
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This study is driven by the need to improve failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus, it is mandatory to understand the behavior of elementary devices under laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses effects induced by static photoelectric laser stimulation (1064nm) on a 90nm technology metal–oxide–semiconductor (MOS) capacitor. On n-MOS capacitor the laser induces interface traps in the low part of the silicon band-gap, contrary to p-MOS capacitor where it is in the upper half part of the gap. It is also shown that electric stress increases the density of such interface traps.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.microrel.2012.06.123</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-6126-6708</orcidid></addata></record> |
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| ispartof | Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.1816-1821 |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Dielectric, amorphous and glass solid devices Electronics Engineering Sciences Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Testing, measurement, noise and reliability |
| title | Effects of 1064 nm laser on MOS capacitor |
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