Effects of 1064 nm laser on MOS capacitor

► We would like to predict complex circuit’s behavior under photoelectric stimulation. ► For that, it is mandatory to understand first the behavior of elementary devices. ► That is why we analyze effects induced by static laser stimulation on MOS capacitors. ► Traps are induced in different part of the band gap depending on the substrate type. ► It is also shown that electric stress increases the density of such interface traps. This study is driven by the need to improve failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus, it is mandatory to understand the behavior of elementary devices under laser illumination, in order to model and predict the behavior of more complex circuits. This paper characterizes and analyses effects induced by static photoelectric laser stimulation (1064nm) on a 90nm technology metal–oxide–semiconductor (MOS) capacitor. On n-MOS capacitor the laser induces interface traps in the low part of the silicon band-gap, contrary to p-MOS capacitor where it is in the upper half part of the gap. It is also shown that electric stress increases the density of such interface traps.