Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

Resistive Switching at the Nanoscale in the Mott Insulator Compound GaTa4Se8

We study the Mott insulator compound GaTa4Se8 in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spectroscopy (ST...

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Veröffentlicht in:Nano letters 2013-08, Vol.13 (8), p.3648-3653
Hauptverfasser: Dubost, Vincent, Cren, Tristan, Vaju, Cristian, Cario, Laurent, Corraze, Benoît, Janod, Etienne, Debontridder, François, Roditchev, Dimitri
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials Science
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:We study the Mott insulator compound GaTa4Se8 in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spectroscopy (STM/STS). Moreover, we show that local electronic transitions can be controlled at the nanoscale at room temperature using the electric field of the STM tip. This opens the way for possible applications in resistive random access memories (RRAM) devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl401510p