Influence of Al doping on the gap values in MgB2 single crystals

We report on the evolution of the small and large gap values in Mg1−xAlxB2 single crystals (for x=0, 0.1 and ∼0.2) by specific heat and point contact spectroscopy. The values deduced from the temperature dependence of the electronic contribution to the specific heat are very close to those obtained...

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Veröffentlicht in:	Physica. C, Superconductivity Superconductivity, 2007-09, Vol.460-462 (1), p.562-563
Hauptverfasser:	Klein, Thierry, Holanova, Zuzana, Marcenat, Christophe, Lyard, Laurence, Marcus, Jacques, Szabo, Pavol, Samuely, Peter, Lee, Sung-Ik
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Effects of crystal defects, doping and substitution Electronic structure Exact sciences and technology Physics Properties of type I and type II superconductors Superconductivity Transition temperature variations
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Beschreibung
Zusammenfassung:	We report on the evolution of the small and large gap values in Mg1−xAlxB2 single crystals (for x=0, 0.1 and ∼0.2) by specific heat and point contact spectroscopy. The values deduced from the temperature dependence of the electronic contribution to the specific heat are very close to those obtained by point contact spectroscopy. The evolution of those gaps with Al concentration suggests that both band filling and interband scattering effects are present and may lead to a merging of the two gaps for Tc∼10–15K.
ISSN:	0921-4534 1873-2143
DOI:	10.1016/j.physc.2007.04.102