80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices

This paper presents a combined pulsed I(V)apulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the safe operating area (SOA) of advanced SiGe:C HBTs. System behavior is explained in detail and re...

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Veröffentlicht in:	Solid-state electronics 2013-06, Vol.84, p.74-82
Hauptverfasser:	WEISS, Mario, FREGONESE, Sébastien, SANTORELLI, Marco, AMIT KUMAR SAHOO, MANEUX, Cristell, ZIMMER, Thomas
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Direct current Electric, optical and optoelectronic circuits Electronics Engineering Sciences Exact sciences and technology Exploration Fundamental areas of phenomenology (including applications) High speed Integrated optics. Optical fibers and wave guides Laser optical systems: design and operation Micro and nanotechnologies Microelectronics Microwave and submillimeter wave devices, electron transfer devices Microwaves Optical and optoelectronic circuits Optics Optimization Physics Radio frequencies Resonators, cavities, amplifiers, arrays, and rings Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation State of the art Transistors
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Zusammenfassung:	This paper presents a combined pulsed I(V)apulsed RF state-of-the-art measurement system. Isothermal DC and AC measurement data can be achieved allowing a complete characterization and exploration of the safe operating area (SOA) of advanced SiGe:C HBTs. System behavior is explained in detail and reproduced by simulation taking into account the influence of all parasitic components. Optimization steps, system verification, measurement results and accuracy issues are presented.
ISSN:	0038-1101 1879-2405
DOI:	10.1016/j.sse.2013.02.027