1D numerical simulation of charge trapping in an insulator submitted to an electron beam irradiation. Part I: Computation of the initial secondary electron emission yield

The aim of this work is to study by numerical simulation a mathematical modelling technique describing charge trapping during initial charge injection in an insulator submitted to electron beam irradiation. A two-fluxes method described by a set of two stationary transport equations is used to split the electron current j e ( z) into coupled forward j e+ ( z) and backward j e− ( z) currents and such that j e ( z) = j e+ ( z) − j e− ( z). The sparse algebraic linear system, resulting from the vertex-centered finite-volume discretization scheme is solved by an iterative decoupled fixed point method which involves the direct inversion of a bi-diagonal matrix. The sensitivity of the initial secondary electron emission yield with respect to the energy of incident primary electrons beam, that is penetration depth of the incident beam, or electron cross sections (absorption and diffusion) is investigated by numerical simulations.