DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication

The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4µm diameter diodes showed a turn-on voltage of 0.5V, a breakdown voltage of 21V and a modulation ratio of 1.63. High frequency characterization allow...

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Veröffentlicht in:	IEICE Transactions on Electronics 2012/08/01, Vol.E95.C(8), pp.1348-1353
Hauptverfasser:	JIN, Chong, PAVLIDIS, Dimitris, CONSIDINE, Laurence
Format:	Artikel
Sprache:	eng
Schlagworte:	Diodes Direct current Electric potential Electronics Gallium Nitride Gallium nitrides Mathematical models Modulation multiplier Schottky diode varactor Voltage
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Beschreibung
Zusammenfassung:	The design, fabrication and characterization of GaN based varactor diodes are presented. MOCVD was used for layer growth and the DC characteristic of 4µm diameter diodes showed a turn-on voltage of 0.5V, a breakdown voltage of 21V and a modulation ratio of 1.63. High frequency characterization allowed obtaining the diode equivalent circuit and observed the bias dependence of the series resistance. The diode cutoff frequency was 900GHz. A large-signal model was developed for the diode and the device power performance was evaluated. A power of 7.2dBm with an efficiency of 16.6% was predicted for 47GHz to 94GHz doubling.
ISSN:	0916-8524 1745-1353
DOI:	10.1587/transele.E95.C.1348