Effect of electrode materials on the scaling behavior of energy density in Pb(Zr0.96Ti0.03)Nb0.01O3 antiferroelectric films

Antiferroelectric Pb(Zr, Nb, Ti)O3 (PZNT) films were deposited via a sol-gel process on Pt(111)/Ti/SiO2/Si, LaNiO3- and La0.5Sr0.5CoO3-buffered Si substrate. The scaling behavior of the energy density W of antiferroelectric films was investigated. The scaling behavior of W against frequency f of PZN...

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Veröffentlicht in:Applied physics letters 2012-09, Vol.101 (11), p.112905-1-3
Hauptverfasser: Ge, Jun, Pan, Gang, Remiens, Denis, Chen, Ying, Cao, Fei, Dong, Xianlin, Wang, Genshui
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Sprache:eng
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Zusammenfassung:Antiferroelectric Pb(Zr, Nb, Ti)O3 (PZNT) films were deposited via a sol-gel process on Pt(111)/Ti/SiO2/Si, LaNiO3- and La0.5Sr0.5CoO3-buffered Si substrate. The scaling behavior of the energy density W of antiferroelectric films was investigated. The scaling behavior of W against frequency f of PZNT on LaNiO3-buffered Si takes the form of W ∝ f0.08, which differs significantly from that form of W ∝ f−0.14 of PZNT on La0.5Sr0.5CoO3-buffered Si. This indicates that the scaling relations of W vary substantially as bottom electrodes change and might be closely related to the variation of nonuniform strain field and depolarization field within the AFE films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4752726