4H-silicon carbide thin junction based ultraviolet photodetectors

This paper deals with the study of the photoresponse properties of 4H-SiC UV-photodetector devices based on a thin junction following their testing in darkness and under UV light over the 200 to 400nm range. An increase of the carrier harvesting for low implanted layer thickness was shown by simulat...

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Veröffentlicht in:	Thin solid films 2012-11, Vol.522, p.17-19
Hauptverfasser:	Biondo, S., Lazar, M., Ottaviani, L., Vervisch, W., Le Borgne, V., El Khakani, M.A., Duchaine, J., Milesi, F., Palais, O., Planson, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	4H-SiC photodetector Applied sciences Carbides Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Darkness Electric power Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Electronics Engineering Sciences Exact sciences and technology Implantation Materials science Nanoscale materials and structures: fabrication and characterization Optoelectronic devices Other topics in nanoscale materials and structures Photoconduction and photovoltaic effects photodielectric effects Photocurrent Photodetectors Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Simulation Spectra Spectral responsivity Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films Thin junction UV wavelength
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