4H-silicon carbide thin junction based ultraviolet photodetectors

This paper deals with the study of the photoresponse properties of 4H-SiC UV-photodetector devices based on a thin junction following their testing in darkness and under UV light over the 200 to 400nm range. An increase of the carrier harvesting for low implanted layer thickness was shown by simulation. Thus, an implantation at low energy (27keV) was carried out on our samples. Because of the thin junction architecture, the photocurrent at 280nm was found to be four orders of magnitude larger than the dark current. A spectral responsivity of our photodetectors shows a peak at 280nm with a value of 0.03 A/W.