Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

A homoepitaxial boron-doped diamond single layer is investigated by means of Fourier transformed infrared spectroscopy (FTIR) and cathodoluminescence (CL). Both techniques are shown to be complementary. µ-FTIR mapping allows to determine the location of active boron while CL allows discernability be...

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Veröffentlicht in:	Diamond and related materials 2010-07, Vol.19 (7), p.904-907
Hauptverfasser:	Fernández-Lorenzo, C., Araújo, D., Martín, J., Alcántara, R., Navas, J., Villar, M.P., Alegre, M.P., Volpe, P.N., Omnès, F., Bustarret, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Boron doping Cathodoluminescence Cathodoluminescence, ionoluminescence Cathodoluminiscence Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed Matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Diamond Exact sciences and technology Fourier analysis FTIR Fullerenes and related materials diamonds, graphite Infrared spectroscopy Mapping Materials Science Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other luminescence and radiative recombination Passivation Physics Position (location) Specific materials Theory and models of film growth
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Zusammenfassung:	A homoepitaxial boron-doped diamond single layer is investigated by means of Fourier transformed infrared spectroscopy (FTIR) and cathodoluminescence (CL). Both techniques are shown to be complementary. µ-FTIR mapping allows to determine the location of active boron while CL allows discernability between passivation and compensation. Hydrogen incorporation during chemical vapour deposition (CVD) growth is revealed to passivate boron acceptors. The obtained results highlight that plasma etching can induce a dissociation of B–H centres.
ISSN:	0925-9635 1879-0062
DOI:	10.1016/j.diamond.2010.02.030