Extreme dielectric strength in boron doped homoepitaxial diamond
The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concent...
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| Veröffentlicht in: | Applied physics letters 2010-11, Vol.97 (22), p.223501-223501-3 |
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| container_end_page | 223501-3 |
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| container_issue | 22 |
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| container_title | Applied physics letters |
| container_volume | 97 |
| creator | Volpe, Pierre-Nicolas Muret, Pierre Pernot, Julien Omnès, Franck Teraji, Tokuyuki Koide, Yasuo Jomard, François Planson, Dominique Brosselard, Pierre Dheilly, Nicolas Vergne, Bertrand Scharnholz, Sigo |
| description | The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below
10
16
cm
−
3
in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed. |
| doi_str_mv | 10.1063/1.3520140 |
| format | Article |
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10
16
cm
−
3
in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3520140</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Condensed Matter ; Electric power ; Engineering Sciences ; Materials Science ; Physics</subject><ispartof>Applied physics letters, 2010-11, Vol.97 (22), p.223501-223501-3</ispartof><rights>2010 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-896fce7b2cb1d11654b2c5cbc9d338a6cfc17736a018a6024b96d97904a6b9193</citedby><cites>FETCH-LOGICAL-c419t-896fce7b2cb1d11654b2c5cbc9d338a6cfc17736a018a6024b96d97904a6b9193</cites><orcidid>0000-0002-1617-8757 ; 0009-0000-3254-9354 ; 0000-0002-6967-237X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3520140$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4497,27903,27904,76130,76136</link.rule.ids><backlink>$$Uhttps://hal.science/hal-00734714$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Volpe, Pierre-Nicolas</creatorcontrib><creatorcontrib>Muret, Pierre</creatorcontrib><creatorcontrib>Pernot, Julien</creatorcontrib><creatorcontrib>Omnès, Franck</creatorcontrib><creatorcontrib>Teraji, Tokuyuki</creatorcontrib><creatorcontrib>Koide, Yasuo</creatorcontrib><creatorcontrib>Jomard, François</creatorcontrib><creatorcontrib>Planson, Dominique</creatorcontrib><creatorcontrib>Brosselard, Pierre</creatorcontrib><creatorcontrib>Dheilly, Nicolas</creatorcontrib><creatorcontrib>Vergne, Bertrand</creatorcontrib><creatorcontrib>Scharnholz, Sigo</creatorcontrib><title>Extreme dielectric strength in boron doped homoepitaxial diamond</title><title>Applied physics letters</title><description>The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below
10
16
cm
−
3
in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed.</description><subject>Condensed Matter</subject><subject>Electric power</subject><subject>Engineering Sciences</subject><subject>Materials Science</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLAzEQhYMoWKsH_8FePWyd2WST5iKWUq1Q8KLnkE2yNrK7Kcki9d-bYrEnTzPv8b2BeYTcIswQOL3HGa0rQAZnZIIgREkR5-dkAgC05LLGS3KV0meWdUXphDyu9mN0vSusd50zY_SmSNkZPsZt4YeiCTEMhQ07Z4tt6IPb-VHvve5yQPdhsNfkotVdcjfHOSXvT6u35brcvD6_LBeb0jCUYzmXvDVONJVp0CLymuW1No2RltK55qY1KATlGjArqFgjuZVCAtO8kSjplNz93t3qTu2i73X8VkF7tV5s1MEDEJQJZF94Yk0MKUXX_gUQ1KEmhepYU2Yfftlk8mejD8P_8LErdepKJfoDt6luVA</recordid><startdate>20101129</startdate><enddate>20101129</enddate><creator>Volpe, Pierre-Nicolas</creator><creator>Muret, Pierre</creator><creator>Pernot, Julien</creator><creator>Omnès, Franck</creator><creator>Teraji, Tokuyuki</creator><creator>Koide, Yasuo</creator><creator>Jomard, François</creator><creator>Planson, Dominique</creator><creator>Brosselard, Pierre</creator><creator>Dheilly, Nicolas</creator><creator>Vergne, Bertrand</creator><creator>Scharnholz, Sigo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-1617-8757</orcidid><orcidid>https://orcid.org/0009-0000-3254-9354</orcidid><orcidid>https://orcid.org/0000-0002-6967-237X</orcidid></search><sort><creationdate>20101129</creationdate><title>Extreme dielectric strength in boron doped homoepitaxial diamond</title><author>Volpe, Pierre-Nicolas ; Muret, Pierre ; Pernot, Julien ; Omnès, Franck ; Teraji, Tokuyuki ; Koide, Yasuo ; Jomard, François ; Planson, Dominique ; Brosselard, Pierre ; Dheilly, Nicolas ; Vergne, Bertrand ; Scharnholz, Sigo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-896fce7b2cb1d11654b2c5cbc9d338a6cfc17736a018a6024b96d97904a6b9193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Condensed Matter</topic><topic>Electric power</topic><topic>Engineering Sciences</topic><topic>Materials Science</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Volpe, Pierre-Nicolas</creatorcontrib><creatorcontrib>Muret, Pierre</creatorcontrib><creatorcontrib>Pernot, Julien</creatorcontrib><creatorcontrib>Omnès, Franck</creatorcontrib><creatorcontrib>Teraji, Tokuyuki</creatorcontrib><creatorcontrib>Koide, Yasuo</creatorcontrib><creatorcontrib>Jomard, François</creatorcontrib><creatorcontrib>Planson, Dominique</creatorcontrib><creatorcontrib>Brosselard, Pierre</creatorcontrib><creatorcontrib>Dheilly, Nicolas</creatorcontrib><creatorcontrib>Vergne, Bertrand</creatorcontrib><creatorcontrib>Scharnholz, Sigo</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Volpe, Pierre-Nicolas</au><au>Muret, Pierre</au><au>Pernot, Julien</au><au>Omnès, Franck</au><au>Teraji, Tokuyuki</au><au>Koide, Yasuo</au><au>Jomard, François</au><au>Planson, Dominique</au><au>Brosselard, Pierre</au><au>Dheilly, Nicolas</au><au>Vergne, Bertrand</au><au>Scharnholz, Sigo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Extreme dielectric strength in boron doped homoepitaxial diamond</atitle><jtitle>Applied physics letters</jtitle><date>2010-11-29</date><risdate>2010</risdate><volume>97</volume><issue>22</issue><spage>223501</spage><epage>223501-3</epage><pages>223501-223501-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below
10
16
cm
−
3
in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3520140</doi><orcidid>https://orcid.org/0000-0002-1617-8757</orcidid><orcidid>https://orcid.org/0009-0000-3254-9354</orcidid><orcidid>https://orcid.org/0000-0002-6967-237X</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Applied physics letters, 2010-11, Vol.97 (22), p.223501-223501-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Condensed Matter Electric power Engineering Sciences Materials Science Physics |
| title | Extreme dielectric strength in boron doped homoepitaxial diamond |
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