Extreme dielectric strength in boron doped homoepitaxial diamond

Extreme dielectric strength in boron doped homoepitaxial diamond

The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concent...

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Veröffentlicht in:Applied physics letters 2010-11, Vol.97 (22), p.223501-223501-3
Hauptverfasser: Volpe, Pierre-Nicolas, Muret, Pierre, Pernot, Julien, Omnès, Franck, Teraji, Tokuyuki, Koide, Yasuo, Jomard, François, Planson, Dominique, Brosselard, Pierre, Dheilly, Nicolas, Vergne, Bertrand, Scharnholz, Sigo
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Electric power
Engineering Sciences
Materials Science
Physics
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Zusammenfassung:The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below 10 16   cm − 3 in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3520140