Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorban...

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Veröffentlicht in:Applied physics letters 2011-08, Vol.99 (6)
Hauptverfasser: Gorge, V., Djebbour, Z., Migan-Dubois, A., Pareige, C., Longeaud, C., Pantzas, K., Moudakir, T., Gautier, S., Orsal, G., Voss, P. L., Ougazzaden, A.
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Sprache:eng
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Zusammenfassung:We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorbance, corresponding to contorted bonds, increases with increased In content. Above 10% of In, the presence of another defect, the concentration of which increases with In content, has been correlated with x-ray diffraction and Raman. We suggest that this defect corresponds to nitrogen vacancies, in agreement with a reported model for GaN.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3624598