Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films
We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorban...
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Veröffentlicht in: | Applied physics letters 2011-08, Vol.99 (6) |
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Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit to a model including band tails and a defect represented as a Brendel oscillator (R. Brendel, Appl. Phys. A 50, 587, 1990). Band tail absorbance, corresponding to contorted bonds, increases with increased In content. Above 10% of In, the presence of another defect, the concentration of which increases with In content, has been correlated with x-ray diffraction and Raman. We suggest that this defect corresponds to nitrogen vacancies, in agreement with a reported model for GaN. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3624598 |